Si4420
AC Characteristics (continued)
Note 1: Not using a 10 MHz crystal is allowed but not recommended because all crystal referred timing and frequency parameters will
change accordingly.
Note 2: See the BER diagrams in the measurement results section for detailed information (Not available at this time).
Note 3: See matching circuit parameters and antenna design guide for information.
Note 4: Optimal antenna admittance/impedance:
Si4420
315 MHz
433 MHz
868 MHz
915 MHz
Yantenna [S]
1.5E-3 - j5.14E-3
1.4E-3 - j7.1E-3
2E-3 - j1.5E-2
2.2E-3 - j1.55E-2
Zantenna [Ohm]
52 + j179
27 + j136
8.7 + j66
9 + j63
Lantenna [nH]
98.00
52.00
12.50
11.20
Note 5: Adjustable in 8 steps.
Note 6: With selective resonant antennas (see: Application Notes available from www.silabs.com/integration ).
Note 7: During this period, commands are not accepted by the chip. For detailed information see the Reset modes section.
Note 8: The crystal oscillator start-up time strongly depends on the capacitance seen by the oscillator. Using low capacitance and low ESR
crystal is recommended. When designing the PCB layout keep the trace connecting to the crystal short to minimize stray
capacitance.
10
相关PDF资料
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相关代理商/技术参数
SI4420-D1-FTR 功能描述:射频发射器 Transceiver EZRadio RoHS:否 制造商:Micrel 类型:ASK Transmitter 封装 / 箱体:SOT-23-6 工作频率:300 MHz to 450 MHz 封装:Reel
SI4420DY 功能描述:MOSFET 30V 400a N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4420DY,518 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4420DY 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
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SI4420DYPBF 制造商:International Rectifier 功能描述:TRANSISTOR 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 30V, 12.5A, SOIC